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| Power Transistors 2SD2220 Silicon NPN triple diffusion planar type Darlington For low-frequency amplification 7.50.2 Unit: mm 4.50.2 10.80.2 s Features q 3.80.2 90 0.650.1 0.850.1 q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings 100 80 5 1.5 1 1.5 150 -55 to +150 Unit V V V A A W C C B 1 2 3 2.50.2 0.8C 16.01.0 Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE A shunt resistor is omitted from the driver Allowing supply with the radial taping 2.50.1 1.00.1 0.8C 0.70.1 0.70.1 0.8C 0.50.1 2.50.2 0.40.1 2.050.2 1:Emitter 2:Collector 3:Base MT3 Type Package Internal Connection C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency (TC=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE* VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCB = 10V, IE = -50mA, f = 200MHz 150 100 80 5 4000 20000 1.8 2.2 V V MHz min typ max 100 100 Unit nA nA V V V *h FE Rank classification Q R Rank hFE 4000 to 10000 8000 to 20000 1 Power Transistors PC -- Ta Collector to emitter saturation voltage VCE(sat) (V) 2.0 Without heat sink 2SD2220 VCE(sat) -- IC 10 IC/IB=1000 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 10 IC/IB=1000 Collector power dissipation PC (W) 1.6 3 3 TC=-25C 1 25C 0.3 100C 1.2 1 TC=-25C 100C 0.3 0.8 25C 0.1 0.1 0.4 0.03 0.03 0 0 20 40 60 80 100 120 140 160 0.01 0.01 0.03 0.1 0.3 1 3 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) hFE -- IC 24 100000 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 20 30000 25C TC=100C -25C 16 10000 12 3000 1000 8 300 4 100 0.01 0 0.03 0.1 0.3 1 3 1 3 10 30 100 Collector current IC (A) Collector to base voltage VCB (V) 2 |
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